By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Modern MOCVD platform for A3N compounds growth Technologies: A3N Platform provides high-quality epitaxial structures based on A3N materials. During development and production of heterostructures for microwave electronics and photonics on substrates from Ø2" to Ø100 mm obtained excellent results. System capacity - 7×Ø2” - 3×Ø3” - 1×Ø100 mm - 1×Ø150 mm Min operating pressure - 75 Torr Max operating pressure - 1127 Torr Substrate temperature - from 1180°С GaN growth rate - up to 50 μm/h Epitaxial layers thickness uniformity on Ø100 mm wafer - ±1 % Key features 01 Horizontal reactor with inductive heating 02 Multi-zone injector 03 Two-wave curvature and reflection measurement system
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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