STE ICP200E

By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)

Plasma chemical etching system in combined capacitive and inductive discharge (ICP-RIE) Technologies: ICP-RIE STE ICP200E system is intended of plasma chemical etching processes using fluorine or chlorine chemistry in combined plasma of capacitive and inductive discharge. System reactor design is optimal for Bosch-process. System capacity - 7×Ø2” - 4×Ø3” - 3×Ø100 mm - 1×Ø150 mm - 1×Ø200 mm Ultimate pressure - 5x10-6 Torr ICP generator (13,56MHz) power - from 50 W to 1000 W - to 3000 W* RF generator power of RIE electrode - from 50 W to 500 W - to 1000 W* Etching uniformity on wafer Ø100 mm - ±2,5 % Key features 01 Wide library of basic technologies 02 Wide range parameters of etching 03 Versatile configuration 04 Optimized gas supply system Basic technologies - SiC deep plasma chemical etching to form metallization on the GaN transistor reverse side - GaAs deep plasma chemical etching to form metallization on the GaAs transistor reverse side - Si plasma chemical etching with high aspect ratio (Bosch-process) - Si plasma chemical etching low wall roughness - SiO2/Si plasma chemical etching with high selectivity - Si plasma chemical etching - Poly-Si high selectivity plasma chemical etching - Mo plasma chemical etching - InGaAs/AlGaAs plasma chemical etching - GaAs/AlGaAs plasma chemical etching for VCSEL