By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Patented design of growth manipulator and substrate holder ensure high accuracy and flexibility of heterostructure growth process. Vertical movement allows to adjust growth geometry in accordance with the specific user tasks. Substrate heater patented design ensures uniform temperature distribution regardless of thermal conductivity of used material. Heater makes it possible to achieve extremely high temperatures on substrate (>1200°C) and grow thick, high-quality AlN/AlGaN buffer layers using ammonia as a nitrogen source. Technical characteristics - Stroke length: 100/150 mm - Heater type: PBN - Substrate diameter: Ø3” Ø100 mm Ø150 mm - Mounting flange: 250CF
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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