By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
D-shape magnetron sputtering system for batch wafer processing provides metal (Cu, Cr, Ni, Ag, Al, Ti, W, V, Ta) coatings, resistive alloys and ITO films deposition. Magnetron sources in chamber are mounted on flexible brackets to change the angle of the evaporator. System capacity - 30×Ø2” - 12×Ø3” - 9×Ø100 mm - 5×Ø150 mm Ultimate pressure - 4x10-6 Torr Wafer holder type - Dome Antidust removable screens - Available Thickness uniformity of sputtered material on wafer Ø100 mm - ±5 % Key features 01 Batch wafer processing 02 Adding sputter sources with scanning beam 03 Optimal configuration for easy maintainance
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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