
By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Advanced technological platform for A3B5 and A2B6 compounds growth. Modern semi-automated technological platform STE35 enables precision epitaxial growth of A3B5 and A2B6 material systems on substrates up to Ø150 mm. Platform is specially designed for R&D and pilot production of epitaxial heterostructures. STE35 has flexible configuration, can be equipped with various growth chambers, and supports 10 or 12 ports for molecular source installation. New molecular sources of special design with increased capacity allows to efficiently operate MBE platform in the conditions of mass heterostructures production. Optimal growth geometry design enables excellent levels of epitaxial layer thickness and component uniformity. System capacity - 1ר100 mm - 1ר150 mm* Ultimate pressure - 5x10-11 Torr In-situ monitoring system - RHEED, RGA, BFM, OFM, IR-pyrometer, laser interferometer Ports for sources - 10 for STE35-10 - 12 for STE35-12 Effusion cell capacity - up to 100 cm 3 for STE35-10 - up to 300 cm 3 for STE35-12 Grown layers thickness uniformity on substrate Ø100 mm for STE35-10 - ±1,5% Grown layers thickness uniformity on substrate Ø100 mm for STE35-12 - ±1% Key features 01 PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics 02 Substrate storage at load-lock and buffer chambers 03 UHV cluster tool on STE35R base

Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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