The decisive advantage of our multi-beam mask writer over conventional technology (single variable shaped beam –V SB) is improved productivity, with a mask write time of less than 10 hours. This makes complex mask patterns possible, in particular for curvilinear Inverse Lithography Technology (ILT), without an increase in mask write times. TECHNICAL DATA Electron beam energy at mask substrate: 50 keV Programmable beams: 512 x 512 (262,144) Multi-beam field: 82 µm x 82 µm Resolution / positional accuracy: 14 nm / 0.1 nm Maximum current density: 1 A/cm2 Maximum electron current: 1 µA
