By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Modern MOCVD platform for A3N compounds growth Allows batch substrates processing and provides high uniformity of epitaxial layers on substrates up to Ø150 mm. Gas dynamics configuration, as well as the planetary substrate holder, ensure grown epitaxial layers high uniformity. System capacity - 6×Ø100 mm - 4×Ø150 mm Min operating pressure - 23 Torr Max operating pressure - 750 Torr Substrate temperature - from 1200°С GaN growth velocity - up to 10 μm/h Epitaxial layers thickness uniformity on Ø100 mm wafer - ±1 % Epitaxial layers thickness uniformity on Ø150 mm wafer - ±2 % Key features 01 Planetary rotation horizontal reactor 02 Multi-zone injector 03 Two-wave curvature and reflection measurement system
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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