By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
SemiTEq’s MOCVD systems developed in cooperation with Russian leading teams of specialists with extensive experience and proven solutions in developing and exploitation of own-made MOCVD’s reactors SemiTEq’s MOCVD systems provide serial production of A3N epitaxial structures with high uniformity on substrates up to 150 mm.
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
CATEGORY
Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
CATEGORY
Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
CATEGORY
