By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Laser interferometer determines the depth and speed of etching by laser interference during plasma chemical treatment of semiconductor wafers Technical characteristics - Emission source: Laser diode - Operating wavelength: 635 nm - Operating distance: 200-1000 mm - Laser spot size: 100 μm - Receiver type: Solide state photodiode - Output signal: 0-10 V - X-stroke: 25 mm - Y-stroke: 25 mm
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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