By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Device is specially designed for contact-free temperature control during the process of epitaxial growth and equipped with a laser targeting system to the control area on the surface of the substrate. The "physical point" calibration mode allows quick adjustments to internal settings by simply pressing a button. Technical characteristics: - Temperature measurement range: 470-1000°C - Spectral band: 0,9-0,97 μm
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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