By AMT&C Group (Advanced Magnetic Technologies & Consulting Group)
Reactive ion etching (RIE) system STE RIE200 implements all modern features of controlled plasma etching of dielectric and metal layers. System capacity - 7×Ø2” - 4×Ø3” - 3×Ø100 mm - 1×Ø150 mm - 1×Ø200 mm Ultimate pressure - <5х10-4 Torr Gas shower head with the possibility of supplying RF potential - Available RF power - from 10 W to 500 W (1000 W*) Etching uniformity on wafer Ø100 mm - ±2,5% Key features 01 Wide library of basic technologies 02 Wide range parameters of etching 03 Versatile configuration 04 Optimized gas supply system Basic technologies Si3N4 plasma chemical etching Technologies: RIE
Materials: H2 Advantages: - Low energy consumption - Absence of high-energy particles and ions - Integrated water cooling Technical characteristics Thermocouple: Type C Bakeout temperature: 200°С Operating temperature: 2000°С In-vacuum length: 190-400 mm In-vacuum diameter: 36 mm Mounting flange: 40CF
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Materials: N2, H2, SiH4 ADVANTAGES: - PBN ionization chamber - Integrated matching device - Inductive plasma Technical characteristics - Input power: 50-400 W - In-vacuum length: 292 mm - Mounting flange: 63/100CF
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Counter-rotating vane set provides for linear control across the entire operating range of the valve. The precise setting of vane rotation of the plates is realized due to the servo-based flap control system.
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