By SAMCO Inc.
Samco’s advanced GaN etching process delivers precise, damage-controlled plasma dry etching for high-quality GaN device fabrication. From power transistors and RF components to microLEDs and laser diodes, Samco systems provide stable plasma control, high selectivity, and finely tunable etch profiles for a wide range of GaN structures. Built on decades of plasma process expertise, our ICP-RIE systems such as the RIE-400iP and RIE-800iPC enable finely tuned GaN etching performance for next-generation semiconductor and optoelectronic devices. GaN fabrication requires highly controlled plasma processing—especially low-damage etching and precise depth control—both of which are strengths of Samco’s ICP-RIE technology. Samco’s GaN etching technology supports a wide range of compound semiconductor applications, including LEDs, laser diodes, and GaN-based power devices. Our systems achieve excellent profile control and high selectivity between GaN and AlGaN, while minimizing plasma-induced damage on sensitive device layers. Key performance features include: - Damage reduction using low RF bias power - High etch selectivity of 60:1 (GaN/AlGaN) - Wide control of trench shape—from vertical to forward taper - Stable etching performance across various substrate types (sapphire, SiC, etc.) These capabilities support both production environments and advanced R&D applications. Damage reduction on AlGaN layer 0 Bias Power, Low Damage Etch Plasma ashing employs ions and radicals generated in plasma to remove photoresist. This process uses two primary mechanisms: - Physical sputtering by ion bombardment. - Chemical reactions forming volatile molecules like H₂O and CO₂. High etch selectivity of GaN over AlGaN 60:1 Selectivity Rate Samco solved the selectivity issue by using a small flow of an additive gas (“Gas X”) in a chlorine-based gas plasma mixture. As a result, an etch selectivity of 60:1 (GaN/AlGaN) is achieved, and the etch process is successfully stopped on the AlGaN interface without over-etching. Additionally, the plasma damage on the AlGaN layer is reduced by employing lower RF bias power. This data is the result of a die/chip sample. Contact us for the wafer process. Smooth Sidewalls and Surface Quality Properly tuned ICP conditions suppress micro-masking and byproduct redeposition, enabling smooth etched surfaces without skirts, notching, or pillar formation—critical for laser diodes, LEDs, and ELO-based GaN structures.
