The EBIRCH technique requires two probe tips to be landed on contacts on two ends of the structure where a defect is assumed to be. One needle is biased while the electron beam scans the area of interest. At defect sites, the incident electron beam will result in localized heating, which in turn will lead to a change of resistance in the defect. This change of resistance is then visualized by the nanoprobing system, as the acquired current signal is fed back into the microscope so that a map of current flow at every position scanned by the electron beam is generated. Defects typically appear as bright spots on the map. Comparing the current map with the secondary electron image generated in parallel as well as the circuit layout, allows a determination of the defect's precise location. Tuning the electron beam's acceleration voltage provides access to various depths within the sample. In summary, EBIRCH is performed by using: - Resistance Contrast Imaging - with a bias applied to the sample - recording changes in current to the EBIC amplifier using AC mode
