By SAMCO Inc.
ALE of silicon dioxide delivers high precision and surface quality, meeting the demands of intricate patterning and structural control. This process is particularly valuable for applications in microfabrication, dielectric layer processing, and advanced integrated circuit designs. By offering uniformity and selectivity, ALE of SiO₂ is poised to drive progress in fields requiring high-resolution and low-damage processing of dielectric materials. SiO₂ was etched via ALE with a photoresist mask to a depth of 103 nm at 8.5 Å/cycle, offering high selectivity for SiO₂/SiN etching in Self-Aligned Contact applications.
