By Global TCAD Solutions (GTS)
In this example, process emulation and simulation is demonstrated to generate a Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) topology and doping profiles. Electrical simulations are performed to extract IdVg, IdVd and breakdown voltage. Project Name: Power_LDMOS_Si_2D PDF revision of 18 June 2026 Tags: example, TutExaCat-Appl.: Analog – Power, Radio-Frequency, proemu, power device, TutExaPrio-0, prosim, release-gts-2026-03 Files: Power_LDMOS_Si_2D.png (9973 bytes), Power_LDMOS_Si_2D.zip (121318206 bytes), Power_LDMOS_Si_2D.pdf (1229351 bytes)
