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Lithography & NanopatterningFabrication & Surface Engineering

High aspect ratio of 80:1 DRIE

By SAMCO Inc.

Nano and microstructure fabrication High-aspect-ratio silicon deep etching with a pattern width of 80 nm and a depth of 6380 nm was achieved using the Bosch process. This process enabled precise control over the shape while maintaining a sufficient selectivity with the resist mask. This advanced etching capability is ideal for applications requiring nano- and micro-scaled structures.