By SAMCO Inc.
Gallium Nitride (GaN) etching using ALE achieves exceptional precision and surface smoothness, meeting the stringent requirements of advanced GaN-based devices like HEMTs and LEDs and laser diodes. This process ensures high selectivity and minimal damage, maintaining the integrity of GaN’s material properties while enabling tight dimensional control. Ideal for applications demanding low defect densities and uniformity, Samco’s GaN ALE solutions support cutting-edge advancements in power electronics, optoelectronics, and RF technologies. GaN was etched using ALE with a SiO₂ mask, achieving a trench width of 0.7 µm and an etching depth of 225 nm at 7.0 Å/cycle. With excellent controllability, this process supports nanopatterning applications like photonic crystals and recess etching for GaN HEMTs. Using ALE with a photoresist mask, GaN was etched at 9.5 Å/cycle to a depth of 142 nm with a trench width of 5 µm, demonstrating excellent process controllability. This method is suitable for nanopatterning applications like photonic crystals and GaN HEMT recess etching.
