By Global TCAD Solutions (GTS)
This tutorial illustrates simulation of a single-event response due to heavy ion strikes on device structures and circuits of increasing complexity. Starting with a simple 2D MOSFET example, the influence of the ion impact position is shown. Furthermore, investigations on circuit level are carried out including a 6T-SRAM cell SEU. Finally, the 3D irradiation simulation capabilities are demonstrated. Project Name: IrradiationSimulation PDF revision of 18 June 2026 Download document only (PDF) - Document, read in your PDF viewer; 5 MB Download project (data + PDF) - Simulation files for GTS Framework; 90 MB
