Main Benefits of DRIE - etch rate of up to 10 µm/min - aspect ratio up to 40:1 - selectivity to positive resist > 75:1 - selectivity to silicon oxide >150:1 - etch depth capability 10 to 675 µm (through wafer etching) - sidewall profile 90°±1° - feature size 5µm to >10 mm microfab’s deep plasma etch technology is designed to deliver superior process performance and maximum process flexibility to meet the needs of a broad range of deep silicon etch applications. - Applications in MEMS and microsystems fabrication include: high aspect ratios, etch depths of as great as 675 µm, etching through-the-wafer, etching into a buried cavity in the wafer, or etching onto buried oxide. - Applications in deep trench isolation include: etching bulk silicon or silicon-on-insulator (SOI) structures with vertical or positive profiles with very high etch rates for high throughput.
