By SAMCO Inc.
Samco’s GaAs etching technology provides precise, high-uniformity plasma dry etching essential for fabricating VCSELs, laser diodes, MicroLEDs, RF devices, and photonic structures. Our ICP-RIE systems enable excellent profile control, stable etch performance, and accurate endpoint detection across wafer sizes up to 6 inches. With decades of experience in III-V etching, Samco supports both production environments and advanced research laboratories worldwide. GaAs Etching Benefits & Performance High Uniformity Across 6-Inch Wafers Our ICP-RIE systems maintain excellent uniformity for GaAs mesa and trench etching. Optional interferometry endpoint detection ensures high-accuracy etch stops even for multi-wafer processes. Etch Profile Control, Selectivity, and Damage Reduction Samco’s ICP-RIE systems are optimized for precise GaAs etch profiles, enabling: - Steep, vertical sidewalls for VCSEL and FET structures - High etch rates suitable for deep mesa and trench applications - Low byproduct redeposition for smooth surfaces - High selectivity between GaAs and mask materials (photoresist, SiO₂) - Stable profile control across wafer sizes up to 6 inches These capabilities support the performance demands of modern optoelectronic and RF devices.
