The ongoing electrification across industries, such as the automotive industry, and the increased need for high-frequency applications due to the digitalization have put new types of materials such as silicon carbide (SiC) and gallium nitride on silicon (GaN-on-Si) at the center of development. There are significant advantages for SiC in power electronics compared to the silicon material used today. These materials can handle much higher current than silicon and their proven utility in safety-critical applications continues to attract considerable attention.With the anticipated development within e.g. 6G, processes related to the manufacturing of GaN-on-Si substrates are expected to increase in the coming years. Obducat has already established production solutions that is being deployed in the manufacturing of GaN substrates as well as pattering of GaN surfaces.
