By Global TCAD Solutions (GTS)
Demonstrates a basic simulation flow on the basis of an SOI FinFET. Drift Diffusion and Density Gradient simulations of IV, CV curves and Gate leakage analysis have been performed. Project Name: SOI_FinFET PDF revision of 18 June 2026 Download document only (PDF) Document, read in your PDF viewer; 4 MB Download project (data + PDF) Simulation files for GTS Framework; 68 MB
