By SAMCO Inc.
Samco was the first Japanese semiconductor process equipment manufacturer to provide Silicon Deep Reactive Ion Etching (DRIE) systems using the Bosch Process. We offer DRIE systems with a range of sample sizes and number of chambers for MEMS device fabrication and TSV via-hole etching. Our systems have industry-leading process capabilities, and the product lineup covers both R&D and production. For high-volume device manufacturing, a double reaction chamber specification is also available. Key Features & Benefits - Industry leading etch rates of over 50 μm/min - High selectivity of over 250:1 (Si:Photoresist) - Uniformity of ±5% or better (ø4, 6, and 8″ wafers) - High aspect ratio (greater than 100:1) - Low scalloping, smooth sidewall profile (less than 0.1 μm scallops) - Patented, dual frequency silion on insulator (SOI) anti-notch etching technique - Unique “anti-tilt” feature that ensures high uniformity - Electrostatic chuck and helium backside cooling (for wafer temperature control) - ICP source can be modified for etching of SiO2
