By Qnami
The application team at Qnami together with imec approached the question of probing the magnetic homogeneity of magnetic memories by characterizing state-of-the art Spin-Transfer Torque Magnetoresistive Random-Access Memory (STT-MRAM) devices with ProteusQ. In the Qnami/imec work, the stray field of individual, encapsulated MRAM bits was measured. With this information, we characterized the switching statistics of 400 bits by using the MagnetoPQ. This allowed to link the switching behavior to the observed magnetic roughness of the devices. The characterization was done on encapsulated devices, sans electrical connectivity, situating our approach early in the process line – a stage where alternative nanoscale metology tools are currently absent. Talk to us - our Application Scientist is happy to talk with you about what you can do with our Scanning NV Magnetometer ProteusQ.
