By SAMCO Inc.
Silicon Carbide (SiC) is renowned for its exceptional electrical breakdown strength and thermal conductivity, making it ideal for high-efficiency power devices in demanding applications like automotive, aerospace, and high-speed electronics. Despite its advantages, SiC presents fabrication challenges, particularly in achieving precise etch profiles and maintaining high etch rates due to its inherent hardness and low etch selectivity. Samco addresses these challenges with advanced SiC etching solutions designed for trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication. Our technology ensures smooth sidewalls and high etch rates, achieving up to 775 nm/min, and maintains superior etch selectivity of over 13:1 (SiC/SiO₂). These capabilities support the production of high-reliability SiC power devices, driving innovation and performance in next-generation electronic systems. Micro trench-free profile with smooth sidewalls A 2 μm deep trench profile (2 μm width) is fabricated. With an adjustment of electrode gap and bias power, the micro-trench is removed, and the sidewall shows a smooth surface. High etch rate 700 nm/min With an adjustment of the ICP and bias power, an etch rate of over 700 nm/min is achieved. High etch selectivity over SiO2 mask 13:1 Selectivity rate (SiC/SiO 2) A selectivity of over 13:1 (SiC/SiO 2) is possible with pressure optimization.
