By Global TCAD Solutions (GTS)
This tutorial demonstrates a basic work-flow for analyzing FinFET or nanowire cross-sections using VSP. Parameterized nanowire templates for rectangular as well as triangular and circular cross-sections are awailable in GTS Structure. A self-consistent solution of the effective mass closed boundary Schroedinger carrier model and the Poisson equation are calculated for (100) and (110) substrate orientation. The wavefunctions are exported to a text file.
