By Center for Functional Nanomaterials Brookhaven
Dedicated electron beam lithography system, operated at 100 keV is capable of patterning feature sizes as small as 8 nm. The system provides capability of high-speed, large-area exposures (1mm field size) and sub-20 nm overlay and stitching accuracy. The system can handle sample substrates from 5mm up to 3” or 4” wafers, as well as 4” photomasks.
