By LayTec GmbH
In-situ control & analysis software EpiNet 2024 is a software for control, analysis and optimization of epitaxial processes in production and development of LEDs, laser diodes, VCSEL, HEMT, HBT and other electronic and optoelectronic devices. The software extracts key figures about wafers' behavior during growth. In run-to-run control and in statistical process control, these key figures are used to improve yield and process capacity. EpiNet 2024 can be integrated into automated fab workflow providing from simple plain-text files to sophisticated live SECS / GEM integration. EpiNet 2024 – Improve yield, save costs! Customer's benefits: - In-situ process control with ex-situ accuracy even for very thin layers - Control of complex production processes on operator level - Fast in-spec / out-of-spec indication for stop or go decisions - High automation saves operator's time, eliminates error sources and makes in-situ control easy without training - Engineer's access level for sophisticated data analysis Measurements: - Time resolved, wafer resolved, zone resolved in-situ measurements of: - Emissivity corrected pyrometry - Multi-wavelength reflectometry - Wafer curvature including asphericity measurements - Multi pocket mode - Window coating tracking (Alpha history) - Wafer backside emissivity correction Analysis: - Analysis recipe for synchronized step-by-step analysis of the growth process - Fast determination (even for very thin layers) of: - Growth rate - Layer thickness - Optical constants - Extensive data base of optical constants of numerous material (e.g. GaN, AlN, AlGaAs) - Numerous statistical analysis: average, maximum, minimum, standard deviation, determination of the slope (e.g. for temperature, curvature) - Improved and accelerated NKR fits - Device-calibrated, substrate or layer referenced absolute reflection - Improved composition analysis for AlGaAs and AlInGaP - Improved dispersion data: - AlGaAs, AlAs, GaAs from 20 °C to 750 °C - AlGaN, AlN GaN from 20 °C to 1500 °C - Sapphire from 20 °C to 1500 °C - SiC-4H from 20 °C to 2000 °C - Dedicated analyses for specialized applications (e.g. GaN 3D - recovery time) Features: Operator's view: PocketGuard - Quick check of all monitored wafers during the run at one glance - All wafers are color-coded by user-defined in-spec / out-of-spec criteria and visualized as they are positioned on the susceptor - In-spec / out-of-spec criteria can be set for all LayTec's analysis features - Customer can easily set up procedures for corrective actions based on PocketGuard information Wafer-to-Wafer view for post-run analysis - Analysis results for all wafers shown in separate web charts (polar charts) - Easy comparison of wafers for run homogeneity check - Fast detection of outliers – wafer zones that are out of specification limits (red circle) or control limits (yellow circles) Color plots and line scans - Color plots (left): time and space-resolved measurements for quick fingerprinting and visualization - Line scans (low right) show wafer homogeneity during growth - Time-resolved transients (upper right) are the basis for detailed analysis of growth performance (see Transient view below) Expert analysis: Transient view - Complex data comparison of critical process parameters down to single data points across zones, wafers and runs - Transients can be segmented manually or automatically into growth steps - Automated analyses of any step to extract process information from raw data (e.g. composition, growth rate etc.) - Pre-configuration of analyses algorithms as recipes for repeated or automated use Further features Configuration panel: customized run type management - Visualization of susceptor geometry for setting measurement zones (available for single and multi-pocket configurations) - Wafer-specific settings for each pocket: susceptor material, pocket material, wafer substrate, thickness and surface condition - For operators: - Use of pre-configured analysis recipes - Automated start of in-situ measurements - Pre-selection of earlier measured reference transients and comparison with the current run - Ideal software tool for wafer-to-wafer, run-to-run and tool-to-tool comparison during epitaxial growth processes to achieve constant device quality Golden Run feature Interfaces - Export interfaces: SECS / GEM, SNMP, TCP / IP, IF-EPI (hardware), Data File Export - Import filters for various epitaxial data formats (e.g., DRT) for viewing, analysis and comparison - Improved export format for convenient import scripting into MES - User-defined logical mapping of wafer pockets Miscellaneous - Data hub based system for high flexibility in customization - Database maintenance: automated jobs, improved throughput, data management - Replay feature available - For office use, EpiNet 2024 supports Windows 10 and 11 compatible PCs Licence packages - Basic / OEM package for basic operation and data analysis - Premium package for advanced analysis and process understanding - Additional licences for specific features - Dongle free network licenses for office use For more information about licence packages please contact sales@laytec.de
Combine measurements of temperature and reflectance at three wavelengths in one tool. EpiTT combines measurements of temperature and reflectance at three wavelengths in one tool. For True Temperature (TT), we apply the method of emissivity corrected pyrometry, which delivers the precise surface temperatures of opaque materials at 950 nm (Si, GaAs, InP). For materials that are transparent at 950 nm (GaN, Sapphire, SiC), EpiTT measures the temperature on the top side of the carrier. Measuring reflectance at three wavelengths monitors all essential properties of the growing layers, such as growth rate, film thickness, stoichiometry changes and morphology. EpiTT offers industry standard metrology for all kinds of epitaxial growth systems and is compatible with different main rotation frequencies in the range from 5-1500 rpm. Fields of application - Temperature range: T=450°C to 1300°C for large viewport systems/T=500°C to 1400°C for narrow viewport systems/other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC - Wafer temperature with precision better than ±1K in a range of 600°C to 1400°C - Wafer and area selective measurements - True wafer temperature for opaque semiconductors such as InP, GaAs and Si - Pocket temperature for GaN, Sapphire and SiC Product features Emissivity corrected pyrometry: - Temperature range from 450°C to 1300°C for large viewport systems/500°C to 1400°C for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC - Accuracy better than 1 K - Wafer and area selective measurements - True wafer temperature for opaque semiconductors such as InP, Graphite (SbS) - Pocket temperature for GaN, Sapphire and SiC Reflectance at three wavelengths: - 950 nm, 633 nm and 405 nm - Growth rate, layer thickness, roughness and other layer qualities - Full performance up to 1500 rpm main susceptor rotation - Further wavelength (e.g. 280nm, 365nm, 1550nm) for special applications are available on request
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X Link® enables fast, automated, non-destructive and accurate evaluation of the level of EVA or polyolefin cross-linking in PV module encapsulation processes. In solar modules, the ethylene vinyl acetate (EVA) or polyolefin encapsulation protects the sensitive solar cells from the environment. In consequence the degree of intermolecular cross-linking of EVA or polyolefin is decisive for the long-term stability and performance of a module. Cross-linking is achieved by thermally curing the polymers during the lamination process. The X Link® system enables fast, automated, non-destructive and accurate evaluation of the level of EVA or polyolefin cross-linking immediately after lamination. It can be integrated into any solar module production site, offering a flexible platform for encapsulation quality control ranging from single point sampling to full module mapping. The stand-alone version is designed for lab applications, manual product sampling, areal mappings, R&D labs and pilot lines, ready to test full-size production-type modules with or without frames. High-resolution spatial mappings of the cross-linking degree and statistical evaluation can be performed. Furthermore, the manual off-line version allows multiple-point measurements on laminates and out-of-production modules, and modules from the field. This setup is a highly useful quality control tool for incoming goods inspection for EPCs, certifiers and consultants. Fields of application - Module encapsulation quality control in glass/backsheet solar module production Product features - Non-destructive test procedure - Testing time of only seconds per measurement points - Flexible module mapping capability - Data output in “% gel content”
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Both emissivity-corrected temperature monitoring and reflectance measurement at three wavelengths are included in all products in our EpiCurve® TT family of products. For reactors with multiple wafer ring configurations, the models with two or three EpiTT heads (EpiCurve®Twin TT and EpiCurve®Triple TT) allow for temperature and reflectance measurements at two or three independent positions respectively.
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All products in the EpiTT family (EpiTT, EpiTwin TT, EpiTriple TT) are available for various MOCVD growth systems such as: - Systems with satellite rotation - Showerhead-like systems - Systems with main susceptor rotation speed up to 1500 rpm - R&D type and customized MOCVD growth systems
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