EpiX C2C

By LayTec GmbH

automated wafer mapping – Automated white light reflectance (WLR) and photoluminescence (PL) wafer mapping – Post-process quality control of entire wafer area with EpiX® – Extended spectral range 250–2400 nm – Spectral resolution down to 0.1 nm – XY mapping stage with automated wafer thickness compensation – Up to 4 configurable laser wavelengths – Adjustable laser power – Predefined and customized algorithms – Up to two load ports for 3", 100 mm, 150 mm & 200 mm cassettes – Prealigner (optional) – Wafer-ID Reader (optional) – Fan-Filter-Units (optional) – Industry-compatible clean room design (up to ISO 3) – High throughput – Automated normalization of measurement data – Wide set of standard analysis methods – Automated yield analysis – Combination of complementary in-situ and ex-situ metrology for in-depth and areal wafer analysis through Combining white light reflectance and photoluminescence, the EpiX® C2C system ensures a comprehensive 2D analysis of critical wafer properties by non-contact optical measurements. The cassette-to-cassette configuration of EpiX® C2C allows to achieve the high throughput required in industrial applications. Parameters Mapping Stage XY scan area ≤ 200 mm diameter Normalization (WLR & PL) Automatic using reference sample Sample holder Continuous vacuum chuck Wafer thickness compensation Distance sensor & z-stage (optional) Mapping speed 100 mm wafer @ 1.0 mm pitch 200 s Mapping speed 150 mm wafer @ 2.0 mm pitch 150 s Photoluminescence Measurements Up to 4 laser sources configurable Default: 405 nm, 532 nm, 785 nm, other wavelengths upon request Laser power on sample for default setup 405 nm: > 25 mW | 532 nm, 785 nm: > 80 mW Intensity stability across wafer < ± 3 % Signal to noise within single spectrum < ± 1 % Spectroscopic Reflectance Measurements Optical head Combined optical head for WLR and PL measurements Spot size configurable: 100 μm, 200 μm, 300 μm WLR light source Tungsten lamp 2915 K (alternative UV light source available) Spectral range configurable: 230 nm to 2400 nm Spectral resolution ≥ 0.1 nm, depending on grating Number of gratings Up to 4 Alternative spectrometer configuration Multiple fixed spectrometers measure in parallel Absolute accuracy at wafer center < ± 0.5 % Signal to noise within single spectrum < ± 0.5 % System-induced deviation across wafer < ± 0.5 % Analysis Features – Edge exclusion – Virtual rotation – Predefined and customized – VCSEL analysis – Single film thickness/composition – Multi peak analysis (analytic/numeric) – Wafer thickness – Full spectral fitting (+connected metrology option) – Die pattern assignment – Import of customer die layout – Wafer level – Die level – XML reports, PDF reports, ASCII exports Software modifiers Algorithms Virtual die patterns Automated yield analysis Reports Parameter Basic Options Load ports 1 Up to 2 Cassette type Open cassette Open cassette, SMIF, FOUP Wafer size 3", 100 mm, 150 mm & 200 mm 3", 100 mm, 150 mm & 200 mm (other sizes upon request) Prealigner Software alignment Optional Wafer ID reader Optional, from above and below Fan-Filter-Unit Optional – Stop band: center, width, edges, height – FP-Dip: center, width, height, area – Identical to in-situ analysis in EpiNet for EpiTT VCSEL – Peak types: Gauss, Lorentz, numeric analysis – Output results: peak wavelength, center wavelength, centroid wavelength, dominant wavelength, height, width, area, asymmetry Options White light reflectance and VCSEL analysis Photoluminescence & multi peak analysis Layout Manual Loading Access Height: 2350 mm Length: 1650 mm Width: 1300 mm Width: 1300 mm Length: 1650 mm Load Ports Control PC Prealigner Wafer Handler Wafer ID-Reader XY-Wafer Stage EpiX ® C2C is designed with multiple upgrade options: extended wavelength range, software interfaces (e.g. for user-owned spectral analysis libraries) upon request. Dimensions & Connections Footprint (WxDxH) ~ 1300 x 1650 (+300) x 2500 mm Mass ~ 1400 kg Power supply 230 V / 16 A CEE 7/4 (CE version) 208 V / 20 A (international / UL version) Vacuum 8 mm, if present, else internal vacuum option available Network RJ45 Operating conditions Clean room or comparable laboratory, temperature 22 ± 2 °C, humidity < 55 % Laser classification CLASS 1 LASER PRODUCT according to DIN-EN60825-1:2015-07 Specifications are subject to further technical development and may differ from those given in the data sheet. Please consult our technical sales team to see how LayTec metrology can best serve your specific application. Developed, manufactured and qualified in Germany.