The ATC-HY Multi-Chamber Deposition System features two Magnetron Sputtering Process Chambers, each dedicated to metal and oxide deposition. Each chamber is equipped with a confocal sputter source configuration, capable of handling 4” wafers, substrate heating up to 1000°C, azimuthal rotation, and RF biasing. These deposition chambers are interconnected via a UHV Transfer Tunnel, allowing for in-situ wafer transfer at vacuum levels below 10⁻⁸ Torr. Additionally, the load-lock chamber includes a degas station, which can heat substrates up to 200°C before they enter the UHV transfer tunnel. The flexible design of the UHV Transfer Tunnel allows for future expansion, either in a linear or right-angle orientation, and supports integration with both AJA and non-AJA systems.
