By Graphenea
A: For most of the purposes, graphene can be directly used without any additional cleaning. However, in those cases where an extra cleaning is needed (STM experiments, for instance), a thermal annealing can be applied to the sample. We recommend annealing at temperatures between 250ºC-450ºC under inert atmosphere in order to reduce absorbents on the graphene surface. It is important to take into account that above 300ºC the electrical properties of graphene will be slightly deteriorated due to the interaction with the substrate and the increased reactivity of the surface. Also, this process is not compatible with flexible substrates. A: It has to be done under dry conditions. When using wafers such as Si or quartz a diamond pen can be used to cleave it. In order to protect the graphene film from debris, we recommend doing it with the protective PMMA layer on top of graphene. In this case, we can provide you the sample with the PMMA on top. When using thin substrates such as PEN or PEN you can easily cut them using scissors. A: Our graphene on SiO 2 is p-doped, with a charge carrier density of around 10 13 cm-2. This intrinsic doping can be reduced by at least one order of magnitude by thermal treatments, which lower the Dirac voltage down to 40-80 V. Another alternative is using a passivation layer on top of the graphene, which prevents the presence of water between the substrate and the graphene film.
GFET GFET S-30 30 backgated graphene devices distributed in a grid pattern on the chip
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mGFET-4D (4 mm x 4 mm) - Processed in ISO 7 Cleanroom The mGFET 4x4 chip from Graphenea is designed for sensing applications, and it is compatible with measurements in a liquid medium. The metal pads are passivated to avoid degradation and reduce leakage currents. It also includes a non-encapsulated electrode at the center of the chip, which allows for liquid gating without the need of an external gate electrode (such as Ag/AgCl probes). This device architecture enhances signal-to-noise ratio and reduces parasitics. This version provides 28 graphene channels: 7 of them are one-channel devices and 7 of them are three-channel devices. These two geometries add flexibility to the measurement scheme (ΔVD or ΔIsd). The die is packaged and wirebonded to a leadless chip carrier (LCC) and it is fully compatible with the Graphenea Card Typical Specifications - · Growth method: CVD synthesis - · Graphene transfer: Polymer assisted transfer - · Substrate: Si/SiO 2 - · Substrate thickness: 525 μm - · Resistivity of Si substrate: 1-10 Ω.cm - · Metallization: 50nm Au-based Contacts - · Encapsulation: 50 nm Al 2 O 3 - · Chip dimensions: 4 mm x 4 mm - · Number of GFETs per chip: 14 - · Number of graphene channels per chip: 28 - · Optical Yield: ≥75 - · Average Dirac point (liquid gating): <1.5 V Absolute maximum ratings - · Maximum gate-source voltage (liquid gating in PBS): ± 1.5V (PBS, 0.001X) - · Maximum temperature rating: 150 °C - · Maximum drain-source current density: 10 7 A.cm -2 Quality control All our samples are subjected to a rigorous QC in order to ensure a high quality products. - · Optical Microscopy inspection of all the devices - · Raman spectroscopy of each fabrication batch - · Electrical characterisation (back gating and liquid gating) of each fabrication batch - · AFM of each fabrication batch Applications Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications. Depending on the application, mGFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene device research, chemical/gas sensing, biosensors, chemical sensors, bioelectronics, healthcare and industrial safety applications. Publications "Robust chemical analysis with graphene chemosensors and machine learning" https://doi.org/10.1038/s41586-024-08003-w Downloads - mGFET-4D Data Sheet - Measurement Protocols and Basic Handling Instructions
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GFET-S20 (Die size 10 mm x 10 mm) - Processed in ISO 7 Cleanroom The GFET S-20 chip from Graphenea is designed for measurements in liquid medium. The new version provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode. Typical Specifications - · Growth method: CVD synthesis - · Graphene transfer: Polymer assisted transfer - · Chip dimensions: 10 mm x 10 mm - · Substrate: Si/SiO 2 - · Substrate thickness: 675 μm - · Resistivity of Si substrate: 1-10 Ω.cm - · Gate oxide thickness: 90 nm - · Metallization: 50nm Au-based Contacts - · Encapsulation: 50 nm Al 2 O 3 - · Chip dimensions: 10 mm x 10 mm - · Number of GFETs per chip: 12 - · Optical Yield: ≥75 - · Average field-effect mobility (back gating): 1000 cm 2 /V.s - · Average Dirac point (back gating): <25 V - · Average Dirac point (liquid gating): <1 V Absolute maximum ratings - · Maximum gate-source voltage (liquid gating in PBS): ± 2V - · Maximum gate-source voltage (back gating): ± 50V - · Maximum temperature rating: 150 °C - · Maximum drain-source current density: 10 7 A.cm -2 Quality control All our samples are subjected to a rigorous QC in order to ensure a high quality products. - · Optical Microscopy inspection of all the devices - · Raman spectroscopy of each fabrication batch - · Electrical characterisation (back gating and liquid gating) of each fabrication batch - · AFM of each fabrication batch Applications Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications. Depending on the application, GFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as photosensing, magnetic sensing and biosensing. Publications "Graphene Sensor Arrays for Rapid and Accurate Detection of Pancreatic Cancer Exosomes in Patients’ Blood Plasma Samples" https://doi.org/10.1021/acsnano.3c01812 "Graphene‑based field‑effect transistors for biosensing: where is the field heading to?" https://doi.org/10.1007/s00216-023-04760-1 "Ultrasensitive detection of SARS-CoV-2 spike protein by graphene field-effect transistors" https://doi.org/10.1039/D2NR05103F "Detection of Glial Fibrillary Acidic Protein in Patient Plasma Using On-Chip Graphene Field-Effect Biosensors, in Comparison with ELISA and Single-Molecule Array" https://doi.org/10.1021/acssensors.1c02232 "Detection of an IL-6 Biomarker Using a GFET Platform Developed with a Facile Organic Solvent-Free Aptamer Immobilization Approach" DOI:10.1109/ACCES.2020.2994611 "High resolution potassium sensing with large area graphene field-effect transistors" https://doi.org/10.1016/j.snb.2019.04.032 Downloads - GFET-S20 Data Sheet download - Measurement Protocols and Basic Handling Instructions download
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GFET-S10(Die size 10 mm x 10 mm)- Processed in ISO 7 Cleanroom The GFET-S10 chip from Graphenea provides 30 graphene devices distributed in a grid pattern on the chip. Thirty devices have a Hall-bar geometry and six have a 2-probe geometry. The Hall-bar devices can be used for Hall-bar measurements as well as 4-probe and 2-probe devices. There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties. Typical Specifications · Growth method: CVD synthesis · Graphene transfer: Polymer assisted transfer · Substrate: Si/SiO 2 · Substrate thickness: 675 μm · Resistivity of Si substrate: 1-10 Ω.cm · Gate oxide thickness: 90 nm · Metallization: 50nm Au-based Contacts · Chip dimensions: 10 mm x 10 mm · Number of GFETs per chip: 30 · Optical Yield: ≥75% · Average field-effect mobility: 1000 cm2/V·s · Average Dirac point: <25 V Absolute maximum ratings · Maximum gate-source voltage (back gating): ± 50V · Maximum temperature rating: 150 °C · Maximum drain-source current density: 10 7 A.cm-2 Quality control All our samples are subjected to a rigorous QC in order to ensure a high quality products. ·Optical microscopy inspection of all the devices ·Raman Spectroscopy of each fabrication batch · Electrical characterization via back gating of each fabrication batch Applications Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications. Depending on the application, GFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene device research, quantum transport, gas sensors, chemical sensors and magnetic sensors. Publications "Graphene field effect transistors on flexible substrate: Stable process and high RF performance" DOI:10.1109/EuMIC.2016.7777516 "High-Gain Graphene Transistors with a Thin AlO x Top-Gate Oxide" Scientific Reports volume 7, Article number 2419 (2017)doi:10.1038/s41598-017-02541-2 Downloads GFET-S10 Data Sheet download Measurements Protocol and Basic Handling Instructions download
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