By NanoIntegris Technologies, Inc.
Metallic single-wall carbon nanotubes are a NanoIntegris exclusive! With the ability to deposit this material onto various substrates at low temperature, the IsoNanotubes-M product can serve as a flexible alternative to ITO, along with numerous other technical applications. They are sorted using our patented density gradient ultracentrifugation (DGU) process and offered in an aqueous solution or a thick film/ buckey paper form. Specifications: Metal content from TGA < 1% Length range from AFM 0.3-4 μm Solvant Water Diameter range 1-1.7 nm Available Purities 70%, 90%, 95%, 98% and 99% Prices: 1201 IsoNanotubes-M 99% Solution $899 1.0 1202 IsoNanotubes-M 99% Thick Film $949 1.0 1203 IsoNanotubes-M 98% Solution $699 1.0 1204 IsoNanotubes-M 98% Thick Film $749 1.0 1205 IsoNanotubes-M 95% Solution $399 1.0 1206 IsoNanotubes-M 95% Thick Film $449 1.0 1207 IsoNanotubes-M 90% Solution $299 1.0 1208 IsoNanotubes-M 90% Thick Film $349 1.0 1209 IsoNanotubes-M 70% Solution $199 1.0 1210 IsoNanotubes-M 70% Thick Film $249 1.0 Significant discounts are available for large size orders. Please contact our sales team for a special quote. Did you know? Owing to their processability, stability, and high conductivity, carbon nanotubes have received significant attention from electronics-industry researchers over the past several years as an alternative to ITO. However, development work with nanotubes has been largely precluded by the unavoidable electronic polydispersity of as-grown CNTs. NanoIntegris has effectively solved this polydispersity problem —by separating as-grown nanotubes via DGU, we can produce large quantities of uniform metallic CNTs with up to 99% purity
NanoIntegris Launches higher-performing Ultra High-Purity Single-Walled Nanotubes: IsoSol-S100 TM Raymor-NanoIntegris breaks a new barrier by becoming the world's first company to commercialize ultra high-purity, polymer-wrapped, semiconducting carbon nanotubes dispersed in organic solvents: IsoSol-S100 TM. This innovative product, offered in powder or solution form, is the first semiconducting single-walled carbon nanotube material on the market with purities exceeding 99.9%. IsoSol-S100 has the following properties: - Can be readily dispersed in a variety of organic solvents such as toluene and xylenes. - Polymer/nanotube ratio can be adjusted to less than a factor of four with nanotube concentrations 10X higher than our aqueous dispersions. - Displays a 50% greater shelf life, as compared to aqueous surfactant solutions. - Allows the production of printed transistors with current ON/OFF ratios on the order to 1.8×10 6 and mobilities on the order of 30 cm 2/(Vs) - Is perfectly-suited for commercial ink jet and aerosol jet printing. IsoSol-100 is based on an RF-plasma grown carbon nanotube source material supplied by Raymor Nanotech at industrial scale. The IsoSol-S100 solutions can be produced at far higher production capacity than density-gradient centrifugation (DGU) or chromatography-based production techniques and at a lower cost. The highly graphitized starting material and low sonication intensity utilized during the extraction process minimizes damage to the nanotubes, allowing the material to exhibit higher crystallinity and longer average lengths of 2µm, as compared to aqueous surfactant-wrapped nanotubes. The patent-pending polymer-wrapping technique used by Raymor-NanoIntegris was developed by the National Research Council Canada within the Printable Electronics Program. It takes advantage of the selective affinity of conjugated polymers for semiconducting carbon nanotubes and surmounts the capacity bottleneck presented by competing technologies. The IsoSol-S100 material is now available to the academic community and to leading companies working in the field of printed transistors, nanotube-based electronics, and sensors.
CATEGORY
Raw | <35% wt% | 0.8 – 1.2 | ~100 – 1,000 nm We currently offer our HiPco Raw nanotube products in two forms: Fluffy Powder and Wet Cake. Due to safety concerns with handling the extremely low-density raw material, the HiPco Raw product is provided as a wet cake for orders of greater than 5g unless otherwise requested. The wet cake is roughly 10wt% nanotubes. The remaining mass is a mixture of 10% ethanol and 90% water, which can be easily removed by thermal or centrifugal treatment. (e.g. 10.70g of wet cake will be provided for a 1g HiPco Raw SWNT order. Raw Fluffy Powder $615 Raw Wet Cake $680 Raw Dense Powder $700 Individual SWNT Diameter i~0.8 – 1.2 nm Individual SWNT Length ii~400 – 700 nm Color Black, Dark Grey Morphology Dry fibrous powder Raman G/D Ratio (532nm)Raw: 35 Catalyst Content<20 wt% (5 Atom%) as Fe Carbon Purity80 wt% (95 atom%) Carbon as SWCNT (TGA)65wt% Crystallinity (Raman Analysis)High Raman G/D ratio Average: ~25 Highest 95@532nm Excitation
CATEGORY
Purified | <15% wt% | 0.8 – 1.2 | ~100 – 1,000 nm All HiPco Purified and Super Purified products are offered as a dry, granular powder. Purified $900 Individual SWNT Diameter i~0.8 – 1.2 nm Individual SWNT Length ii~400 – 700 nm Color Black, Dark Grey Morphology Dry fibrous powder Raman G/D Ratio (532nm)Purified: 95 Catalyst Content<20 wt% (5 Atom%) as Fe Carbon Purity80 wt% (95 atom%) Carbon as SWCNT (TGA)65wt% Crystallinity (Raman Analysis)High Raman G/D ratio Average: ~25 Highest 95@532nm Excitation
CATEGORY
Super Purified | <5% wt% | 0.8 – 1.2 | ~100 – 1,000 nm All HiPco Purified and Super Purified products are offered as a dry, granular powder. Super Purified $2240 Individual SWNT Diameter i~0.8 – 1.2 nm Individual SWNT Length ii~400 – 700 nm Color Black, Dark Grey Morphology Dry fibrous powder Catalyst Content<20 wt% (5 Atom%) as Fe Carbon Purity80 wt% (95 atom%) Carbon as SWCNT (TGA)65wt% Crystallinity (Raman Analysis)High Raman G/D ratio Average: ~25 Highest 95@532nm Excitation Product Applications The use of NanoIntegris’ HiPco within scientific research has proven quite extensive. This small-diameter SWCNT material has found to be a valuable component for applications such as cancer therapy, battery electrode conductivity, electric field enhancement, thin film transistor creation, and gas sensors.
CATEGORY
