By LayTec GmbH
LayTec's EpiCurve TT family of products are optical in-situ systems featuring wafer curvature, emissivity-corrected wafer temperature and muli-wavelength reflectance. EpiCurve TT system is a combination of LayTec's EpiCurve and EpiTT technology. EpiCurve TT product family - Wafer selective in-situ curvature measurement - Asphericity measurements to obtain information on wafer curvature along two perpendicular directions: for systems with Advanced Resolution (AR) - Reflectance compensation detection (RCD) for enhanced dynamic range - Wafer/pocket selective true temperature (TT) measurement - High precision calibration: factory calibration against a certified black body source and on-site calibration of the complete set-up with LayTec's calibration tool AbsoluT - Line-scan measurements across the wafers for uniformity evaluation - Configurations with up to two additional EpiTT heads (Twin/Triple) for temperature and reflectance measurement on additional positions (wafer rings / heating zones) - Wafer selective reflectance measurements at three wavelengths - Wafer selective growth rate analysis - Recipe-controlled automated growth rate fit for multi-layer structures - Uniformity checks (e.g., for comparison center to edge): reflectance and temperature measurements at several positions on the wafer, on different wafers and on different wafer rings (in case of Twin, Triple) - Line-scan measurements across the wafers for uniformity evaluation Features Curvature Temperature Reflectance Features - Optimized for 24 h / 7 day operation in production environment - Measurements on single and multiple wafers (rotating or non-rotating), supporting satellite type susceptors even with multiple wafers per satellite - Wobble compensating optics Parameter EpiCurve TT EpiCurve TT AR Curvature range*/typical accuracy (km-1) - 1950 (convex) to + 800 (concave)/± 3 - 1950 (convex) to + 800 (concave) /± 0.5 (asphericity: ± 0.3) Reflectance Noise typically better than ± 0.5 % Growth rate Accuracy better than ± 1 % Temperature range T=450 °C to ~ 1300 °C for large viewport systems / accuracy better than ± 1 K T=500 °C to ~ 1400 °C for narrow viewport systems / accuracy better than ± 1 K Other temperature ranges on request (e.g. 1500 °C for UV LED applications, 1800 °C for SiC) High temperature optical database includes AlGaN, AlGaAs, InGaN, AlInGaP, Ge, InP, GaAs, Si3N4, Si, SiC Other materials available on request System components Example drawing EpiCurve Twin TT 1 – Optical head for curvature measurements EpiCurve 2, 3 – EpiTT fiber optical heads for true temperature (TT) and reflectance (R) measurements 4 – Electronic control unit 5 – LayTec control computer (includes: measurement PC, TFT flat screen, mouse, keyboard) 6 – Deposition system (not delivered by LayTec) 7 – Rotation encoder (optional by LayTec on request) 8 – Growth control computer (not delivered by LayTec) 9 – Additional analog output 4–20 mA (wiring not supplied by LayTec) Measurable growth parameters Communication / Integration Parts - Data exchange with growth system control computer via hardware interface and/or TCP/IP protocol based software interface. Pre-configurations is possible for different growth systems. - Remote controllable from growth recipe - Heartbeat/watchdog signals for SPS integration - SECS/GEM implementation on request - Analog output up to 4–20 mA * In center zone depending on measurement geometry The products of our EpiCurve TT family are equipped with 3 reflectance wavelengths as a standard. Wavelength combinations are available on request. Depending on your application, the curvature measurement is perfomed by a red or a blue laser. EpiCurve TT optical head for curvature, reflectance and temperature measurements Light sources Curvature Reflectance Light source Semiconductor laser High brightness LED module Standard wavelengths and bandwidth (nm) 405 (blue) 670 (red) 405 ± 1, 633 ± 1.5, 950 ± 5, others on request Life-time according to manufacturer (h) >10 000 >20 000 >20 000 Description of the parts Parameter Suspector rotation (rpm) Number of data points per second (Hz) Curvature 18…35 Reflectance 3… ~ 20 100 20… ~ 100 2000 The number of measurements within one susceptor revolution (max. sampling rate per round) and the time between the measurements (data repetition rate) depend on susceptor / carrier rotation. Electronic control unit and PC The electronic control unit and measurement PC are standard 19” boxes that can be easily mounted into existing 19” racks. Typical susceptor / Carrier rotation (rpm) Rotation frequency example (rpm) Repetition rate (sec) Spatial resolution: max. number of measurements per revolution Curvature (Based on 18 Hz) Reflectance 0 and 3…~25 10 6 100 600 20 3 50 300 20…~120 60 4 18 2 000 120 2 9 1 000 Developed, manufactured and qualified in Germany. Specifications are subject to further technical development and may differ from those given in the data sheet. In certain cases, performance may be limited by reactor type and/or growth conditions. Please consult our technical sales team to see how LayTec metrology can best serve your specific application.
Combine measurements of temperature and reflectance at three wavelengths in one tool. EpiTT combines measurements of temperature and reflectance at three wavelengths in one tool. For True Temperature (TT), we apply the method of emissivity corrected pyrometry, which delivers the precise surface temperatures of opaque materials at 950 nm (Si, GaAs, InP). For materials that are transparent at 950 nm (GaN, Sapphire, SiC), EpiTT measures the temperature on the top side of the carrier. Measuring reflectance at three wavelengths monitors all essential properties of the growing layers, such as growth rate, film thickness, stoichiometry changes and morphology. EpiTT offers industry standard metrology for all kinds of epitaxial growth systems and is compatible with different main rotation frequencies in the range from 5-1500 rpm. Fields of application - Temperature range: T=450°C to 1300°C for large viewport systems/T=500°C to 1400°C for narrow viewport systems/other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC - Wafer temperature with precision better than ±1K in a range of 600°C to 1400°C - Wafer and area selective measurements - True wafer temperature for opaque semiconductors such as InP, GaAs and Si - Pocket temperature for GaN, Sapphire and SiC Product features Emissivity corrected pyrometry: - Temperature range from 450°C to 1300°C for large viewport systems/500°C to 1400°C for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC - Accuracy better than 1 K - Wafer and area selective measurements - True wafer temperature for opaque semiconductors such as InP, Graphite (SbS) - Pocket temperature for GaN, Sapphire and SiC Reflectance at three wavelengths: - 950 nm, 633 nm and 405 nm - Growth rate, layer thickness, roughness and other layer qualities - Full performance up to 1500 rpm main susceptor rotation - Further wavelength (e.g. 280nm, 365nm, 1550nm) for special applications are available on request
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X Link® enables fast, automated, non-destructive and accurate evaluation of the level of EVA or polyolefin cross-linking in PV module encapsulation processes. In solar modules, the ethylene vinyl acetate (EVA) or polyolefin encapsulation protects the sensitive solar cells from the environment. In consequence the degree of intermolecular cross-linking of EVA or polyolefin is decisive for the long-term stability and performance of a module. Cross-linking is achieved by thermally curing the polymers during the lamination process. The X Link® system enables fast, automated, non-destructive and accurate evaluation of the level of EVA or polyolefin cross-linking immediately after lamination. It can be integrated into any solar module production site, offering a flexible platform for encapsulation quality control ranging from single point sampling to full module mapping. The stand-alone version is designed for lab applications, manual product sampling, areal mappings, R&D labs and pilot lines, ready to test full-size production-type modules with or without frames. High-resolution spatial mappings of the cross-linking degree and statistical evaluation can be performed. Furthermore, the manual off-line version allows multiple-point measurements on laminates and out-of-production modules, and modules from the field. This setup is a highly useful quality control tool for incoming goods inspection for EPCs, certifiers and consultants. Fields of application - Module encapsulation quality control in glass/backsheet solar module production Product features - Non-destructive test procedure - Testing time of only seconds per measurement points - Flexible module mapping capability - Data output in “% gel content”
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Both emissivity-corrected temperature monitoring and reflectance measurement at three wavelengths are included in all products in our EpiCurve® TT family of products. For reactors with multiple wafer ring configurations, the models with two or three EpiTT heads (EpiCurve®Twin TT and EpiCurve®Triple TT) allow for temperature and reflectance measurements at two or three independent positions respectively.
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All products in the EpiTT family (EpiTT, EpiTwin TT, EpiTriple TT) are available for various MOCVD growth systems such as: - Systems with satellite rotation - Showerhead-like systems - Systems with main susceptor rotation speed up to 1500 rpm - R&D type and customized MOCVD growth systems
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