By LayTec GmbH
Turning data into predictive insight Con cept Just as EtchNet, SimulyzR is a browser based application that allows offline analysis of etch processes. It either pre - dicts how a given stack will reflect light (based on data which the user defines) or fits unknown parameters – thickness, n,k values, etch rate – to the measured data. It helps to understand what happens during a process and in particular, it helps to define which reflectivity feature from which wavelengths trace should be used for process control for a particular process step. SimulyzR workflow explained The user employs preconfigured scripts which simulate the reflectance during an etch process based on the user’s input parameters for a specific process. That could, e.g., start with data from a recent etch run. A desired stack of materials can be built according to the original recipe and its simulated expected reflectivity trace during an etch run can be compared to measured data. Simulations can start with best guesses for the parameters such as refraction index n and extinction coefficient k and deliver real values for n and k after fitting the simulation to the measured data. These values for n and k can be used for subsequent simulations of new processes or different layer stacks. Beyond material data, fits can be made for process parameters such as layer thickness or etch rate, too. The user can change data and watch signals change. Once the simulated results are satisfactory, the recipe can be exported to EtchNet for use in a real etch run. A pa rticularly handy construct is the virtual interface approach: instead of modelling dozens of buried layers, engineers collapse everything below the region of interest into two parameters – amplitude of the reflectance virtual interface and phase of the Fabry-Pérot oscillation speed - ing fits without hurting accuracy. Benefi ts su mmarized SimulyzR enables a model-based analysis and simulation of etching transients. It cuts development time by iden - tifying which wavelengths and time windows contain the cleanest markers, lets teams decouple rate errors from optical constant errors, and even inverts epi growth data (coupled with LayTec’s EpiNet ® software) to approximate an etch through trial.
Combine measurements of temperature and reflectance at three wavelengths in one tool. EpiTT combines measurements of temperature and reflectance at three wavelengths in one tool. For True Temperature (TT), we apply the method of emissivity corrected pyrometry, which delivers the precise surface temperatures of opaque materials at 950 nm (Si, GaAs, InP). For materials that are transparent at 950 nm (GaN, Sapphire, SiC), EpiTT measures the temperature on the top side of the carrier. Measuring reflectance at three wavelengths monitors all essential properties of the growing layers, such as growth rate, film thickness, stoichiometry changes and morphology. EpiTT offers industry standard metrology for all kinds of epitaxial growth systems and is compatible with different main rotation frequencies in the range from 5-1500 rpm. Fields of application - Temperature range: T=450°C to 1300°C for large viewport systems/T=500°C to 1400°C for narrow viewport systems/other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC - Wafer temperature with precision better than ±1K in a range of 600°C to 1400°C - Wafer and area selective measurements - True wafer temperature for opaque semiconductors such as InP, GaAs and Si - Pocket temperature for GaN, Sapphire and SiC Product features Emissivity corrected pyrometry: - Temperature range from 450°C to 1300°C for large viewport systems/500°C to 1400°C for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC - Accuracy better than 1 K - Wafer and area selective measurements - True wafer temperature for opaque semiconductors such as InP, Graphite (SbS) - Pocket temperature for GaN, Sapphire and SiC Reflectance at three wavelengths: - 950 nm, 633 nm and 405 nm - Growth rate, layer thickness, roughness and other layer qualities - Full performance up to 1500 rpm main susceptor rotation - Further wavelength (e.g. 280nm, 365nm, 1550nm) for special applications are available on request
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X Link® enables fast, automated, non-destructive and accurate evaluation of the level of EVA or polyolefin cross-linking in PV module encapsulation processes. In solar modules, the ethylene vinyl acetate (EVA) or polyolefin encapsulation protects the sensitive solar cells from the environment. In consequence the degree of intermolecular cross-linking of EVA or polyolefin is decisive for the long-term stability and performance of a module. Cross-linking is achieved by thermally curing the polymers during the lamination process. The X Link® system enables fast, automated, non-destructive and accurate evaluation of the level of EVA or polyolefin cross-linking immediately after lamination. It can be integrated into any solar module production site, offering a flexible platform for encapsulation quality control ranging from single point sampling to full module mapping. The stand-alone version is designed for lab applications, manual product sampling, areal mappings, R&D labs and pilot lines, ready to test full-size production-type modules with or without frames. High-resolution spatial mappings of the cross-linking degree and statistical evaluation can be performed. Furthermore, the manual off-line version allows multiple-point measurements on laminates and out-of-production modules, and modules from the field. This setup is a highly useful quality control tool for incoming goods inspection for EPCs, certifiers and consultants. Fields of application - Module encapsulation quality control in glass/backsheet solar module production Product features - Non-destructive test procedure - Testing time of only seconds per measurement points - Flexible module mapping capability - Data output in “% gel content”
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Both emissivity-corrected temperature monitoring and reflectance measurement at three wavelengths are included in all products in our EpiCurve® TT family of products. For reactors with multiple wafer ring configurations, the models with two or three EpiTT heads (EpiCurve®Twin TT and EpiCurve®Triple TT) allow for temperature and reflectance measurements at two or three independent positions respectively.
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All products in the EpiTT family (EpiTT, EpiTwin TT, EpiTriple TT) are available for various MOCVD growth systems such as: - Systems with satellite rotation - Showerhead-like systems - Systems with main susceptor rotation speed up to 1500 rpm - R&D type and customized MOCVD growth systems
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