LiteScope

By NenoVision

AFM-in-SEM LiteScope. Merge the forces of AFM and SEM. Site-specific Delayering Tip Navigation. Failure Analysis with AFM-in-SEM LiteScope integrated directly into the FIB/SEM environment, enables in-situ, site-specific electrical and topographical characterization of semiconductor components at the nanoscale level. It delivers precise conductivity mapping and dopant profiling without compromising sample integrity. Key benefits and features: - Site-specific failure analysis: Providing high-resolution conductivity & dopant mapping while using SEM for precise localization. - Seamless in-vacuum workflow: Fully compatible with existing FA tools and workflows, preventing surface oxidation and contamination. - Probe protection & optimized access: Docking station preserves AFM tip during FIB milling, while sample rotation optimizes angle for accessing even complex geometries. - Time-Saving & Cost Efficient: Integrated solution reduces measurement time per sample and accelerates R&D. LiteScope solution for Semiconductor Failure Analysis: Our groundbreaking AFM-in-SEM solution enables in-situ, site-specific, high-resolution electrical property mapping of complex semiconductor devices, while allowing faster and more accurate failure localization at the interconnect level. This approach helps identify failure mechanisms more effectively, which can lead to enhanced device performance, greater reliability, and increased manufacturing yield. - Innovative in-situ correlative failure analysis approach - Time to result significantly reduced - Site-specific vias or transistors NenoVision combines tradition and expertise with unique solutions in nanoscale using AFM-in-SEM microscopy. Failure Analysis techniques from SEM (EBIC, EBAC, …) and AFM (C-AFM, SSRM, …) enhance defect detection and accelerate the failure diagnostics. Setup is compatible with SEM systems produced by Thermo Fisher Scientific, TESCAN, ZEISS, Hitachi, Jeol, and their accessories.