By Innolume
Innolume laser diode drivers are engineered to provide high-performing solutions for a wide range of demanding laser applications. These devices feature precise current control, powerful output, and flexible integration options, ensuring reliable and robust operation across various systems. Our laser diode driver products guarantee optimal laser performance and stability, making them indispensable components in industries and research settings. Key features: - Wide-Ranging Applications: Our LDDs are designed to operate in different modes, providing precise control for various applications, including constant current, nanosecond and picosecond pulses. They are able to meet the diverse needs of laser diodes. - All-in-One Enclosure: We offer self-contained unit that combines and integrates a current driver and a thermoelectric cooler (TEC) for compact functionality. - User-Friendly Software: LDDs can be equipped with software that features a graphical user interface for easy control. - Connectivity Options: LDDs come with USB, RS-232, CAN and UART interfaces for flexible connectivity. - Ready-to-use: Comes pre-assembled with a fiber-coupled module, making it easy to integrate. A laser diode driver (LLD) is an electronic component used to safely and precisely control the current supplied to a laser diode. Laser diodes are very sensitive to changes in current, and incorrect driving can damage them or cause them to become unstable. The driver ensures that the diode operates at the desired current levels to produce the required optical output without exceeding its limits.
Two main types of fiber-coupled lasers, Fabry-Perot and DFB, are available for specific needs. Fabry-Perot lasers, offering up to 1000mW peak power and 400mW continuous power, are well-suited for fiber laser seeding. Similarly, DFB lasers, capable of generating ultra-short 50 picosecond pulses using gain switching with a peak power of 300mW and continuous power of 50mW, are also ideal for various applications, including seeding in fiber lasers. Fiber Bragg Grating (FBG) lasers, useful for generating nanosecond pulses, complement these options. For detailed insights on FBG lasers, manufacturer consultation is advisable. Choose Fabry-Perot for higher power applications, and DFB for precise, ultra-short pulses. Key features of Pulsed Laser Diodes - High Peak Power: Fabry-Perot lasers offer peak power of up to 1000mW and continuous power of up to 400mW, while DFB lasers can achieve a peak power of 300mW and continuous power of up to 50mW. - Ultra-Short Pulses: DFB lasers generate ultra-short pulses of 50 picoseconds using gain switching technology. - Packaging Options: Various packaging configurations available, including 14-pin modules and chip placement options such as on a submount, on a heatsink, or in a TO can. - Customization: Innolume has the capability to produce LDs with specified wavelength and spectrum width based on customer requests. 14-pin BTF package
CATEGORY
KEY FEATURES Common cavity types Littrow and Littman use diffraction gratings to reflect selected wavelengths, with tuning via grating rotation. An intracavity lens collimates the beam onto the grating, while the zero-order beam serves as output. Optimized for wavelength-locked external cavity operation Open Package Customization Operating wavelengths, tuning range and other parameters can be tailored for specific needs. Custom solutions Curved stripe design chip enabling the suppression of self-lasing and wider tuning range. Ultra-low facet reflection Count on the unwavering performance and stability of our lasers, ensuring reliable operation. Fiber-coupled device option (Gain-Module) Gain Chips are critical components for building tunable diode lasers and highly stable external cavity diode lasers. Unlike standard Fabri-Perot laser diode chips, gain chips feature deep anti-reflective (AR) coatings on one facet and high-reflective (HR) coating on the second (one side optical access) or AR-coating on both facets (two side optical access), significantly suppress self-lasing or preventing it. One side access gain chip can have straight stripe (type A) or curved stripe at AR-side (type B) to achieve ultra-low reflection (<10 -5 ). Two sides access gain chips have curved stripe at one side with deepest AR-coating and straight stripe at other one with partial reflection, enabling power outcoupling and maintaining feedback (type C). For advanced optical schemes chips with deepest AR-coating on both facets (type D) might be available. Diodes come in TO-headers, on C-mounts or Aluminium Nitride carrier (Chip-on-carrier). Custom packaging enables seamless integration, like coupling into photonics integrated circuit (PIC), boosting performance and compatibility in complex systems. High Power RoHS Compliance TECHNICAL CHARACTERISTICS Wavelength Precision Customization Options Integration Flexibility Broad-band Part-number Wavelength tuning range, nm Maximal output power, mW Forward current, mA Slow axis beam divergency, deg. Fast axis beam divergency, deg. Chip cavity length, mm Stripe type Package GCB0780030TC030MXXXX 765–795 33 150 7.5 22 2 curved TO-header GCB0850030TC050MXXXX 830–860 50 200 8 32 4 curved TO-header GCB0920090TC200MXXXX 860–950 200 400 8.5 36 1.5 curved TO-header GCB0950110TC200MXXXX 890–1000 200 400 5.5 31 1.5 curved TO-header GCB1060150TC200MXXXX 990–1140 210 400 8 17 1.5 curved TO-header GCB1105130TC200MXXXX 1030–1160 200 400 9 38 1.4 curved TO-header GCB1180100TC200MXXXX 1120–1220 210 600 6 37 3 curved TO-header GCB1220110TC200MXXXX 1160–1270 230 800 6 32 3 curved TO-header GCB1270130TC200MXXXX 1200–1330 200 800 6 38 3 curved TO-header GCB1330070TC200MXXXX 1290–1360 200 800 7 37 3 curved TO-header GCA1160090TC200MXXXX 1100–1190 230 600 5 42 3 straight TO-header GCA1270140TC200MXXXX 1200–1340 220 800 5 38 3 straight TO-header GCA1330060TC200MXXXX 1300–1360 210 800 5 38 3 straight TO-header GMB1060150YY250MXXXX 990–1140 250 600 6.5 16 3 curved Fiber-coupled GMB1140120YY130MXXXX 1080–1200 130 600 6 39 3 curved Fiber-coupled GMB12200130YY140MXXXX 1150–1280 140 800 7 35 3 curved Fiber-coupled
CATEGORY
A distributed feedback (DFB) laser diode is a semiconductor light source designed for stable single-frequency emission. Its internal Bragg grating structure acts as a wavelength filter, enabling single longitudinal mode operation with a narrow linewidth and high coherence length. Innolume’s DFB lasers operate in the near-infrared range (780–1330 nm), providing high spectral purity, low noise, and reliable performance. With compact size and stable emission properties, these laser diodes are a practical choice for applications in telecommunications, spectroscopy, optical communication, metrology, sensing, and scientific research. DFB lasers cover part of the near-infrared range from 780 nm to 1330 nm. This range supports a wide variety of applications, including telecommunications, sensing, and spectroscopy. Typical wavelength tolerance is ±1 nm, ensuring reliable alignment with target specifications. Finer accuracy can be provided on request. Additional fine-tuning is possible by adjusting chip current and temperature. KEY FEATURES Wavelength Range Wavelength Accuracy DFB lasers support stable single-frequency operation without mode hops. High side-mode suppression reduces noise and improves spectral signal quality. Single-Mode Operation DFB lasers feature a narrow spectral line, typically ranging from a few megahertz down to hundreds of kilohertz. This key characteristic ensures high coherence length. Spectral Linewidth DFB lasers are available in TO-can, 14-pin butterfly (with or without built-in isolator), and RF packages. Chip-on-carrier versions are also offered for integration into custom assemblies. Packaging Options Wavelength Precision High Stability Customization Options Integration Flexibility RoHS Compliance Mode-hop-free TECHNICAL CHARACTERISTICS – Chip-on-carrier versions also available in TO package. 2 – Polarization extinction ratio 1 – Side-Mode Suppression Ratio Part-number Peak wavelength, nm Output power, mW Forward current, mA Forward voltage, VThreshold current, mA SMSR 1,dB PER 2,dB Notes Package DFB09XX000CC060MXXXX 968–986 60 100 1.3 20 45 18 FF Div. (V/H, FWHM): 38°/8° Chip-on-carrier DFB10XX000CC100MXXXX 1020–1120 100 200 1.7 30 45 18 FF Div. (V/H, FWHM): 40°/9° Chip-on-carrier DFB11XX000CC100MXXXX 1120–1200 100 300 1.5 30 45 18 FF Div. (V/H, FWHM): 45°/9° Chip-on-carrier DFB12XX000CC100MXXXX 1200–1280 100 350 1.7 50 45 18 FF Div. (V/H, FWHM): 45°/9° Chip-on-carrier DFA1310000CC070MXXXX 1270–1330 70 200 1.5 25 45 18 FF Div. (V/H, FWHM): 53°/9° Chip-on-carrier DFB13XX000CC100MXXXX 1280–1330 100 350 1.7 50 45 18 FF Div. (V/H, FWHM): 50°/9° Chip-on-carrier DFB13XX000CC250MXXXX 1280–1330 250 800 1.6 100 45 18 FF Div. (V/H, FWHM): 50°/9° Chip-on-carrier DFB10XX000YY025MFVXX 1020–1120 25 200 1.7 30 55 18 with integrated isolator Fiber-coupled DFB13XX000YY100MFVXX 1300–1330 100 800 2.6 60 50 18 with integrated isolator Fiber-coupled DFB07XX000YY010MFXXX 780–795 10 100 1.7 70 45 15 - Fiber-coupled DFB09XX000YY030MFXXX 968–986 30 100 1.3 20 55 18 - Fiber-coupled DFB10XX000YY050MFXXX 1020–1120 50 200 1.7 30 55 18 - Fiber-coupled DFB11XX000YY050MFXXX 1120–1200 50 300 1.5 30 50 18 - Fiber-coupled DFB12XX000YY050MFXXX 1200–1280 50 350 1.7 50 50 18 - Fiber-coupled DFB13XX000YY050MFXXX 1280–1330 50 350 1.7 50 50 18 - Fiber-coupled
CATEGORY
Single-mode Fabry-Perot (FP) laser diodes are engineered to operate in a single transverse mode, delivering a diffraction-limited output beam with high power density, achieved through efficient collimation. The FP configuration, incorporating two parallel mirrors, stabilizes lasing conditions and enhances beam quality, making these diodes suitable for precision-dependent optical systems. This combination of high CW power, precise wavelength control, and customizable packaging solutions underscores the robust adaptability and technical performance of single-mode Fabry-Perot laser diodes, making them indispensable in specialized optical and photonic applications. KEY FEATURES Designed for high-performance use, these diodes deliver up to 700 mW CW output power (fiber-coupled) and 500 mW (TO-can headers), ensuring operation in demanding environments. High Continuous Wave (CW) Output Power These diodes offer an extensive wavelength range with customization options. Temperature tuning enables precise control, ensuring ±5 nm or better tolerance for seamless integration into photonic systems. Wavelength Precision and Tuning Versatile diodes offer single-mode or polariza-tion-maintaining fiber coupling, optional 900 μm loose tube, built-in monitor photodiode, isolators and multiple connectors like FC/PC, SC/APC, SC/ PC and APC ferrule for flexible interfacing. Fiber-Coupled Packaging Flexibility Diodes come in TO-can headers (open or sealed), on C-mounts or Aluminium Nitride submounts (Chip-on-carrier). Custom packaging enables seamless integration, boosting performance and compatibility in complex systems. Open Package Customization TE polarization Integration Flexibility Wavelength Precision Customization Options High Power TECHNICAL CHARACTERISTICS 1 – Custom wavelengths are available upon request 2 – Polarization extinction ratio RoHS Compliance Part-number Wavelength, nm 1Output power, mW Forward current, mA Forward Voltage, VSpectral bandwidth, nm PER 2,dB Slow axis beam divergency, deg. Fast axis beam divergency, deg. Package SML1000B50YY250MXXXX 1000 250 450 1.7 0.2 17 - - Fiber-coupled SML10XXB50YY400MXXXX 1020, 1025, 1030, 1050, 1064, 1080, 1100 400 800 1.9 0.2 17 - - Fiber-coupled SML10XXB50YY600MXXXX 1020, 1050, 1064, 1120 600 1000 2.1 0.2 17 - - Fiber-coupled SML12XX005YY500MXXXX 1130–1259 500 1200 1.7 5 17 - - Fiber-coupled SML13XX005YY500MXXXX 1260–1340 500 1500 1.9 6 17 - - Fiber-coupled SML12XX005YY700MXXXX 1190, 1195, 1200, 1240, 1270 700 1700 1.8 6 17 - - Fiber-coupled SML1000B60TC300MXXXX 1000 300 400 1.6 0.6 - 6 17 TO-header SML1064B60TC500MXXXX 1064 500 600 1.7 0.6 - 6 31 TO-header SML12XX005TC300MXXXX 1155, 1170, 1180, 1200, 1210, 1230, 1310 300 600 1.6 6 - 6 30 TO-header SML12XX005TC500MXXXX 1155, 1200, 1210 500 900 1.6 5 - 6 29 TO-header
CATEGORY
