By LayTec GmbH
LayTec’s EpiCurve® TT metrology system allows to monitor all crucial parameters needed for control ling the epitaxial growth of InP-based thin film. With LayTec’s emissivity-corrected pyrometry the true wafer temperature can be controlled precisely, whilst the actual layer growth can be monitored by EpiTT’s three dedicated reflectance wavelengths. At the same time wafer bowing and strain management can be addressed by the deflectometry in LayTec’s EpiCurve® TT. All these methods are complemented by the comprehensive EpiNet software which allows for detailed and precise quantitative analysis of the measurement results by employing our extensive high-temperature nk database. Example: Control of device related InGaAsP and InGaAlAs film growth on InP: When lattice matched growth is validated by in-situ wafer bow sensing, both quaternary material systems can be treated as an effective quasi-ternary mixture: (InGaAs)x(InP)1-x and (InGaAs)x(AlGaAs)1-x, respectively.
