By Montana State University - Montana Microfabrication Facility (MMF)
Photolithographic Process for S 1813 Positive Photoresist on Al Coated Si Wafer 1. Clean Al Coated Wafers - Heat AZ KWIK Strip Remover to 60 °C. - When bath is at temperature, place wafer in dish and start 10 minute timer. - When time is complete, take wafer out of KWIK Strip and wash off with deionized water. Blow dry with nitrogen gun. 2. Dehydration Bake - Place cleaned Al coated Si wafer on vacuum hot plate, and perform a dehydration bake for 10 minutes at 150 °C. Let the wafer cool to room temperature after bake. 3. Spin Coat Wafers with S 1813. - When wafer reaches room temperature, load a wafer on a prepped Headway or Brewer spin coater. - Choose the proper recipe, recipe 5 for the Headway spinner and recipe 6 for the Brewer spinner, and press start. Resist spun at 5000 rpm to give a thickness of about 1.35 µm. - Dispense S 1813, about 6 mL per wafer, during the spin coating. 4. Soft Bake - Soft bake for 1 minute at 115 °C on a vacuum hot plate. 5. Expose Wafer in the Contact Aligner - Expose for 2.7 seconds without any filter for optimum exposure dose. Channel A of the contact aligner is set at 15 mW/cm2. 6. Develop Wafer - Develop wafer for 45 seconds in AZ 726 MIF Developer. - Wash with deionized water to completely remove developer, and blow dry with nitrogen gun. 7. Hard Bake - Hard bake for 3 minutes at 100 °C on a vacuum hot plate.
