Contact and proximity alignment for larger features, about 5µm and greater. I-line, 365 nm, stepper (projection) lithography for features down to about 2µm on 150mm substrates, coming soon as an addition to the current contact and proximity capability. Front to back contact aligner that patterns aligned to both the front and back of the wafer, for membranes, cavities, and through wafer MEMS and biomedical devices. Positive, negative, lift-off, and polyimide photoresist, applied by spin coat or spray coat. Photomask layout support; the photomasks used by contact, proximity, and stepper lithography are themselves written by maskless pattern generators. All photolithography performed in a class 100 cleanroom. Rogue Valley Microdevices currently patterns wafers with contact and proximity lithography, including front to back alignment, and is adding i-line stepper projection lithography to reach smaller features. Maskless direct write is used most often for prototyping and for generating photomasks; if a project calls for grayscale or maskless patterning, the team can advise on the best route.
