By SAMCO Inc.
80°C and below Samco’s low-temperature PECVD processes enable deposition of SiO2 and SiNx at temperatures below 80°C, ideal for thermally sensitive substrates used in MEMS, TSV, and OLED applications. - MEMS: Sacrificial layers and membranes. - TSV: Oxide passivation with minimal stress. - OLED: Barrier coatings for flexible substrates. High speed deposition: 400 nm/min. Achieve deposition rates exceeding 400 nm/min at 80°C, boosting throughput while maintaining excellent film quality. Superior stress control: SiO₂ films deposited at 120–150°C show minimal stress variation even after 30 days, making them ideal for TSV passivation in thinned wafers. Low current leakage: SiO₂ films deposited at low temperatures demonstrate low leakage (~nA) in deep vias, ensuring reliable passivation. Optimized optical properties: SiNx films deposited at 80°C achieve >90% light transmission in the visible spectrum and <10% reflection, suitable for OLED and solar cell applications.
