By Montana State University - Montana Microfabrication Facility (MMF)
1. Start from a clean wafer. 2. Dehydration: 120°C baking for 10 mins. 3. Adhesive promotor coating: Programmed HMDS coating (Program 1). 4. Spin Coating: Note. To ensure adhesive promotor active, start PR spin coating right after HMDS coating. 1. Dispense sufficient amount of AZ 1512 from the center of the wafer covering 60% - 70% of the wafer surface. 2. Spin at 500 rpm for 20 seconds to spread out the photoresist. 3. Spin at 4000 rpm for 35 seconds to reach 1.3 micrometer in thickness. (+ or – 476 nm). 5. Soft Bake: 110°C (1 min). 6. Exposure: 2.4 seconds with expose dose 40 mJ. 7. Develop: 1. 50 seconds gentle agitation in AZ 300MIF solution. 2. (Optional) Stir the wafer slightly to remove red PR residue floating on top of wafer. 8. Rinsing: Dip into water to remove developer. 9. Dry: Blow dry the wafer with compressed Nitrogen gun. Result Expectation: For pattern dimension larger or equal to 2 micrometers, single layer pattern has 75° or higher cross-sectional angle at the silicon substrate.
