By Xenocs
Laboratory SAXS/WAXS technology provides quantitative access to the crystallinity, orientation, phase separations and interface formation during development and fabrication. In thin-film semiconductors, grazing-incidence geometries (GISAXS/GIWAXS) probe near-surface and in-plane organization in-situ or in-operando, directly linking processing conditions and operational stress to device reliability. The crystallite morphology, phase, uniformity and spacing of semiconductors in thin films can be measured using GISAXS and GIWAXS techniques to understand charge transport rates across the material. If crystallites are aniostropic in shape, their orientation can impact the efficiency of charge transport and other optical and mechanical properties. The GISAXS and GIWAXS techniques can measure the anisotropy across the surface of films to optimize the orientation and maintain quality of the material. The film thickness affects transmission of light and charge and the roughness affects the quality of the interface with other surfaces. X-ray reflectivity measures these material properties for control of the material performance. By measuring the nanoscale structure of films at different manufacturing stages or under usage environments the electrical properties and mechanical strength can be controlled. Pore size and connectivity control the diffusion of molecules, ions, gases, and liquids through mesoporous scaffolds, influencing reaction rates and device performance. This can be measured with SAXS under usage conditions providing more clarity in the material performance.
