Anisotropic wet silicon etch in both KOH and TMAH, run on a dedicated wet etch bench in a class 100 cleanroom. Available on 100mm, 150mm, and 200mm substrates. LPCVD silicon nitride and thermal oxide masks, matched to the chosen etchant. Front to back alignment for membranes, cavities, and through wafer structures. TMAH for CMOS compatible and post-metal micromachining; KOH for fast, smooth, economical bulk micromachining. Combined with dry etch, including plasma etch and DRIE, where vertical sidewalls are required.
