Plasma etching removes material through a controlled combination of reactive gas chemistry and ion bombardment, letting engineers pattern dielectric films while holding tight control of etch rates and feature dimensions. Our plasma dry etch processes support the dielectric films used in MEMS fabrication, including: - Silicon dioxide (SiO₂) - Silicon nitride (Si₃N₄) - Silicon oxynitride Fluorine-based plasma chemistries provide high selectivity and clean etch profiles when processing dielectric films deposited through PECVD, LPCVD, and thermal oxidation processes.
