By NenoVision
Site-Specific Electrical Characterization of specific vias & interconnections. Merging sample preparation and analyses together by AFM-in-FIB/SEM. Reducing time and cost per analysis and speeding up the failure diagnostics. Application areas: NAND flash memory, SRAM & logic circuits, Transistors (FinFET, CMOS, …), Thin films. Semiconductors are the foundation of modern electronics, enabling everything from computing to data storage. As device dimensions shrink and become more complex, precise failure analysis is critical. In-situ electrical failure analysis of NAND structures: Using AFM-in-FIB/SEM, specific vias in a NAND structure were identified, sequentially delayered using the PFIB, and electrically analyzed via Conductive AFM mapping (C-AFM) and I/V Spectroscopy. This approach provides real-time monitoring of the delayering process, ensuring accurate via targeting and revealing electrical failures of the nodes at different depths. Failure analysis workflow with AFM-in-FIB/SEM: Failure analysis with AFM-in-FIB/SEM begins with site-specific sample preparation using FIB to expose to the defect area. The AFM tip is then navigated to the region of interest for high-resolution electrical characterization, such as C-AFM or SSRM. Results are correlated (calibrated if needed) with SEM techniques for a comprehensive failure understanding. Site-Specific Dopant Concentration Analysis of MOSFET Transistor: We analyzed dopant concentration in semiconductor devices using Scanning Spreading Resistance Microscopy (SSRM) combined with SEM for high-resolution, site-specific electrical characterization. In-situ SEM-SSRM measurements provide an efficient workflow for dopant concentration mapping with nanoscale precision. By correlating SEM imaging with local electrical properties, we can identify variations in doping levels critical for device performance and reliability. For SiC MOSFET transistors, this approach enables direct characterization of doped layers and junctions analysing precise shape, size, and depth of the structures, which has a crucial impact on its functionality and performance, ensuring proper conductivity and minimizing losses. Delayering Process: The in-situ approach enables sequential PFIB delayering, followed by localized conductivity analysis at each step, allowing precise access to individual layers at different depths. Calibration: For quantitative dopant profiling, calibration starts with reference resistance measurements on a sample with known dopant concentrations. The measured resistance is then correlated with dopant levels to generate a calibration curve for accurate dopant quantification.
