By University of Waterloo - Waterloo Institute for Nanotechnology (WIN)
The SI 500 system will be configured to enable ALE and Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) processes on a variety of materials, enabling the fabrication of quantum devices with fewer defects and higher device efficiencies. The tool features: - Planar ICP Source with 2500 W power supply - Substrate electrode with 600 W maximum power and precise low power adjustability (0.6 W to 30 W) - Sample handling for wafers up to 150 mm in diameter - Flexible sample size handling with He-cooled aluminium carrier pieces - Substrate temperature control from -20 ºC to 200 ºC - Fast mass flow controllers (MFCs) enabling precise delivery of: - CF4 - SF6 - C4F8 - CHF3 - H2 - N2 - CH4 - O2 - Ar - Cl2 - BCl3 - In-situ ellipsometry - Endpoint detection by laser reflectance and optical emission spectroscopy Delivery of this system is anticipated to take place in the second quarter of 2027, with installation and commissioning activities to take place thereafter.
