Infineon processes first functional power devices on 300mm SiC wafers

Munich, 9 November 2026. Infineon Technologies AG has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria. The company states it is the first to reach this step in a full-scale semiconductor fab environment, using existing silicon manufacturing equipment.

Infineon says chip production on 300 mm wafers is more efficient than on 200 mm wafers, as the larger diameter offers 2.3 times more chips per wafer.

"This technological milestone further strengthens our leadership in power systems. Congratulations and thank you to our passionate team, making significant progress in bringing 300-millimeter SiC out of the lab into a manufacturing environment," said Jochen Hanebeck, CEO of Infineon Technologies.

Infineon will plan the 300-millimeter SiC technology and ramp timing in close collaboration with its customers and partners. The company said it will continue executing its 200-millimeter SiC manufacturing roadmap.

In parallel, Infineon has proofed the feasibility of its Cold Split technology with 300-millimeter SiC at its Dresden, Germany, site. Cold Split separates wafers from a SiC boule with less material loss and reduced processing time compared with conventional wire sawing.

Infineon will show the world's first processed 300-millimeter SiC wafer at electronica in Munich from 10 to 13 November, in Hall C3, Booth 502.

Source: Infineon Technologies AG news