19 October 2026. Keysight Technologies Inc of Santa Rosa, CA, USA, via its office in Winnersh, UK, has collaborated with the University of Glasgow, the National Physical Laboratory (NPL) in Teddington, UK, and Taiwan-headquartered MPI Corp to develop a new approach to broadband characterization of next-generation sub-terahertz (sub-THz) semiconductor devices.
The organizations demonstrated continuous on-wafer characterization of indium phosphide high-electron-mobility transistors (InP HEMTs) from near-DC to 250GHz in a single sweep. Keysight says conventional approaches can require multiple measurement setups and calibrations, adding complexity and making consistent data for broadband device modeling more difficult.
The four organizations combined Keysight instrumentation, University of Glasgow semiconductor devices, MPI on-wafer probing technology and NPL metrology expertise. The setup enabled continuous measurement from near-DC to 250GHz with a single probe touchdown. Built-in source filtering and broadband source power calibration helped ensure signal purity at the probe-tip.
Thierry Locquette, VP of sales, Europe, Middle East & Africa at Keysight, said: "Characterizing devices continuously from near-DC to 250GHz in a single sweep can significantly simplify the measurement process for researchers developing next-generation semiconductor technologies."
Dr Xiaobang Shang, principal scientist and on-wafer measurement lead at NPL, said NPL contributed its high-frequency on-wafer metrology and calibration expertise to the collaboration.
Source: Semiconductor Today
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