Ion Beam Assisted Deposition is a deposition technique that uses any deposition source to deposit the material onto a substrate which is bombarded by ions coming from an ion beam source. This process enables the deposition of metals, semiconductors, dielectrics, and ceramics. During IBAD process the material to be deposited vaporizes and then condenses onto the substrate surface. At the same time the thin film and the surface of the substrate are exposed to energetic ions emitted by the ion beam, causing the surface to undergo changes like densification, surface diffusion, and thin film nucleation. This technique can be used on more temperature-sensitive materials, such as plastics or polycarbonate lenses, since it can be performed at relatively low temperatures. The angle of the ion beam with the substrate is used to influence the roughness and texture of the film surface. Ion Beam Assisted Deposition: the best choice for high end optical coatings Ion Beam Assisted Deposition is a versatile thin-film deposition technique widely utilized in the semiconductor, sensor industries to fabricate high-performance films with controlled properties and top-quality optical coatings and in the medical industry for fabrication of metallic coatings that are compatible with medical implants for biocompatibility or to create antimicrobial surfaces. KEY FEATURES - Low pressure processing (10-5 to 10-4 Torr range) - Reduced porosity (higher density) in deposited films (low pressure means reduced included gas) - High quality optical films with good stoichiometry, low optical absorption and smooth surfaces - An Assist Ion Beam is combined with a deposition source (Ion Beam, E–Beam, Sputtering depending on target material and layers) - Substrate conditioning from –35 °C up to 800 °C - Reactive gases (O2, N2, H2, etc.) can be added for direct reaction during deposition process - Optional automatic or manual load lock with optional pre-heating and/or plasma treatments - Optional full optical thickness monitor for an unlimited number of layers by T% or R% wavelength scans on the coated substrates APPLICATIONS - Consumer Electronics - Solar energy - Healthcare and medical devices - Optics and Photonics - Energy storage - Wear resistant coatings - Nanotechnology TECHNICAL DATA Base pressure HV < 1x10-6 mbar Base pressure UHV < 1x10-9 mbar Pumping system Turbomolecular, Cryo, TSP or combined Cryo / Turbo for ultimate vacuum and processes Sources Gridded or not gridded, DC, DC pulsed, RF Additional sources Evaporation, Electron Beam, Magnetron sputtering, Ion Beam Deposition area Up to 12” Substrate handling Rotation: up to 50 rpm, optional planetary configuration; Tilt: ±45°; Offset (Z or X): up to 100 mm Process temperature Up to 800 °C Reactive process One or more reactive gases (O2, H2, N2, etc.) Thickness uniformity Up to 1% Process control Programmable quartz crystal thickness controller and/or in situ optical monitor Substrate load Manual in main Chamber or by Load Lock with manual or automatic manipulator Load lock Single or Multiple Load Locks, can be motorized with multiple substrate holder Multi wafer loading Optional multi wafer charge system up to 25 wafers Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials
We design and manufacture complete deposition thin film processing equipment solutions for R&D or pilot production applications. Based on most advanced technologies, our products include a complete array of turnkey systems using chemical or physical deposition, sputtering or etchnig processes
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In order to satisfy the need to obtain products through deposition with different technologies, we are able to design and build multi-process machines able to operate automatically both in sequential and single mode
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We pay special attention to specific customer needs, offering complete tailor made systems designed to achieve the performance required by the customer and provided with a process guarantee
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Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD Applications PECVD is used to produce high-quality semiconductor and dielectric films required for various applications, like low and high-power semiconductor devices, photovoltaic solar cells' active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more. - Consumer Electronics - Automotive Industry - Solar energy - Aerospace and Defence - Healthcare and medical devices - Optics and Photonics - Wear resistant coatings Key features - RF showerhead electrode for uniform electric field and gas distribution - Modular process gas manifold with mass flow controllers for up to 12 gases - Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill - Automatic process pressure control - Alternatively Hot Wire CVD - In situ spectroscopic plasma monitoring - Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments) - Optional wide range optical thickness monitor for the control of layer thickness - Optional in situ spectroscopic ellipsometry for thickness measurement Deposited materials Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics Plasma Enhanced CVD - the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature
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