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LprobeSoft03_COND Pt-Pt

By Vmicro

LS003_Pt-Pt_30, Lprobe conductive, AFM probe (coating Pt/Pt, tip 30 µm, Vmicro) 特長 - 探針設計の可能性を広げる新しい MEMS 技術 - 長い探針により電気測定モードでのカンチレバー由来アーティファクトを低減 - コーン角および探針-カンチレバー角を設計により自由に選択 - TrueTipView:優れた探針視認性により試料上へ正確にアプローチ - 取り扱いやすい垂直側壁プローブチップ 用途 - 電気測定モード - 静電気力顕微鏡(EFM) - ケルビンプローブフォース顕微鏡(KPFM) 仕様 Parameter Unit Nominal Range Frequency kHz 90.0 50-150 Spring constant N/m 3.0 1-8 Tip height H t µm 30.0 15-50 Tip apex radius nm 25.0 20-35 Tip side angle θ ° 15.0 +/-0.5° Tip-cantilever angle α ° 118.0 +/-0.5° Cantilever length L c µm 115.0 +/-1 Cantilever width W c µm 40.0 +/-1 Cantilever thickness T c µm 1.4 +/-0.15 Cantilever backside coating Pt Tip-side coating Pt Tip and cantilever material p-doped Silicon 0.01-0.02 ohm-cm Chip dimensions mm 3.4x1.6x0.4 カンチレバーと探針の詳細 SEM full-view image of Vmicro LS003 Pt-Pt 30 AFM probe showing complete probe geometry - 傾斜探針設計 AFM ヘッドの取り付け角度を補正し、さまざまな試料表面で正確なデータ取得を可能にします。 - 探針高さ 30 µm 深い領域やアクセスしにくい試料領域のイメージングを可能にします。 - 探針側壁角 15° 探針と試料のコンボリューションを抑え、より正確な形状測定を実現します。 - 探針先端半径 25 nm 高度な AFM アプリケーションに信頼性の高い分解能を提供します。 Lprobes: AFM Probes based on in-plane silicon technology

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XLprobes

XLprobes Lprobes: AFM Probes based on in-plane silicon technology

LT040 Al-Si 30 AFM Probe | LprobeTapping40 Al-Si

Features - New MEMS technology unlocking probe engineering - Long tip with profiled shape - small cone angle - TrueTipView: Precise tip visibility thus accurate landing on sample - Vertical sidewalls probe chip for easy handling Applications - Topography imaging in oscillating modes - Tapping mode - Non-contact mode - True non-contact TM - Roughness measurements - Nanoscale imaging on highly corrugated samples - Challenging aspect ratios Specifications Specifications Tilted tip design: Compensates for the AFM head mounting angle, ensuring accurate data on diverse sample surfaces. Tip height 30 µm: Enables imaging of deeper or difficult-to-access sample regions. Half-cone angle <10°: Minimizes tip-sample convolution, ensuring more accurate morphological measurements. Guaranteed tip radius <10 nm: Provides reliable resolution for advanced AFM applications.

LprobeFast0.8 Au-Si AFM Probe (LF0P8_Au-Si_15)

LF0P8Au-Si15 | Lprobe fast AFM probe | Vmicro Features - New MEMS technology - Highly profiled tip with angle engineering - Tip visibility provides accurate landing - Vertical sidewall chip for safe handling Applications - Imaging of cells, bacteria, and tissues in liquid or air - Fast peakForce Tapping TM mode - Fast Wavemode TM mode - High-resolution imaging of polymers and composite materials Specifications - Frequency: 400.0 kHz (nominal), 200-600 range - Spring constant: 0.8 N/m (nominal), 0.2-3 range - Tip height H t: 15.0 µm (nominal), 05-60 range - Tip apex radius: 7.0 nm (nominal), 2-10 range - Tip side angle θ: 22.0 ° (nominal), +/-0.5° - Tip-cantilever angle α: 112.0 ° (nominal), +/-0.5° - Cantilever length L c: 40.0 µm (nominal), +/-1 - Cantilever width W c: 10.0 µm (nominal), +/-1 - Cantilever thickness T c: 0.65 µm (nominal), +/-0.15 - Cantilever backside coating: Au - Tip-side coating: Uncoated - Tip and cantilever material: p-doped Silicon 0.01-0.02 ohm-cm - Chip dimensions: 3.4x1.6x0.4 mm Cantilever & tip details

LprobeNanoFTIR_spectra+03 A2-A2 (NF003_A2-A2_30)

NF003A2-A230 | Lprobe nano-FTIR AFM probe | Vmicro Features - PDMS-free and contamination-controlled - New MEMS technology - Long tip increases spectral range - Highly profiled tip with angle engineering - Precise tip visibility enables accurate landing on sample - Vertical sidewall chip for safe handling Applications - Enhanced s-SNOM spectroscopy in the mid-infrared region - s-SNOM imaging in the mid-infrared region - Soft probe, optimal for combined s-SNOM and KPFM imaging Specifications Frequency: 90.0 kHz nominal, range 50-150 Spring constant: 3.0 N/m nominal, range 1-8 Tip height H t: 30.0 µm nominal, range 15-50 Tip apex radius: 70.0 nm nominal, range 55-90 Tip side angle θ: 15.0° nominal, +/-0.5° Tip-cantilever angle α: 118.0° nominal, +/-0.5° Cantilever length L c: 115.0 µm nominal, +/-1 Cantilever width W c: 40.0 µm nominal, +/-1 Cantilever thickness T c: 1.4 µm nominal, +/-0.15 Cantilever backside coating: A2 Tip-side coating: A2 Tip and cantilever material: p-doped Silicon 0.01-0.02 ohm-cm Chip dimensions: 3.4x1.6x0.4 mm